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Tokyo Electron Ltd Patents

What Tokyo Electron Ltd has filed at the patent office — applications as well as grants, because a filing is on the record eighteen months before anyone has to say what it was for.

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Filings on file
74
Granted
0
Still pending
74
Filed under
2 names

74 filings

Newest filing first. A pending application has no patent number yet, and most never get one.

InventionPatent
MEASURING DEVICE, MEASURING METHOD, AND VACUUM PROCESSING APPARATUSH01J 37/32458, H01J 37/32733, H01J 37/32935, H01J 37/32972, H10P 72/0421, G01J 3/0205, G01J 3/443, H01J 37/32513, H01J 37/32743, H01J 37/32917, H01J2237/334Filed as Tokyo Electron Limited2026-06-22Atsushi SAWACHIpending
SUBSTRATE TRANSFER DEVICE AND SUBSTRATE TRANSFER METHODH10P 72/3204, H10P 72/3202, H10P 72/0606, B65G 47/90, H10P 72/78, H10P 72/0602, H10P 72/33, H10P 72/0464, H10P 72/70, H10P 72/3222, B65G 54/02, G01B 11/02, G01K 7/02Filed as Tokyo Electron Limited2026-06-18Takehiro SHINDOpending
PREDICTION DEVICE AND ETCHING CONTROL SYSTEMH10P 72/0612, H10P 72/0424, G05B 13/04Filed as Tokyo Electron Limited2026-06-18Toyohisa Tsurudapending
PLASMA PROCESSING APPARATUS, POWER SOURCE SYSTEM, AND PLASMA PROCESSING METHODH01J 37/32091, H01J 37/32146, H01J 37/32174, H10P 14/60, H10P 50/242, H10P 14/29, C23C 16/44, C23C 16/509, H01J 37/32183, H01J 37/32715, H01J2237/3321, H05H 1/46Filed as Tokyo Electron Limited2026-06-17Pengkai HONGpending
APPARATUS AND METHOD FOR REPAIRING DEFECT OF SEMICONDUCTORH10P 72/0402, H10P 72/1924, H01J 37/3171, H10P 72/00, H10P 72/0434, H10P 72/1916, H10P 72/0462, H10W 20/095, H10P 72/0431Filed as Tokyo Electron Limited2026-06-17Chi-Wen CHENpending
APPARATUS FOR PROCESSING SUBSTRATE AND METHOD OF TRANSFERRING SUBSTRATEH10P 72/3302, H10P 72/7618, H10P 72/3204, H10P 72/7602, H10P 72/0441, H10P 72/0464, H10P 72/0454, H10P 72/0462, H10P 72/3306, B25J 9/12, B25J 11/0095, H02N 15/00Filed as Tokyo Electron Limited2026-06-16Takehiro SHINDOpending
APPARATUS AND METHODS FOR PROCESSING BONDING SEMICONDUCTOR WAFERSH10P 14/6319, H10P 10/128, H10P 90/00, H10P 72/0402, H10P 90/1914Filed as Tokyo Electron Limited2026-06-15Satohiko Hoshinopending
SUBSTRATE PROCESSING APPARATUSC23C 16/4404, C23C 16/4405, H10P 14/43, H10P 14/418, C23C 16/34, C23C 16/4408, C23C 16/455, C23C 16/45527, C23C 16/45544, C23C 16/52Filed as Tokyo Electron Limited2026-06-15Taichi MONDENpending
SUBSTRATE SUPPORT AND SUBSTRATE PROCESSING APPARATUSH10P 72/722, H01J 37/32532, H01J 37/32642, H01J 37/32697, H10P 72/0434, H10P 72/7624, H10P 72/0432, H10P 72/7611, H01J 37/32715, H01J 37/32724Filed as Tokyo Electron Limited2026-06-12Chishio KOSHIMIZUpending
SURFACE RELIEF GRATING PERFORMANCE AND COST ENHANCEMENTS FOR AUGMENTED REALITY APPLICATIONSG02B 6/34, G02B 27/0172, G02B 6/124, G02B2027/0178Filed as Tokyo Electron Limited2026-06-12Ryan BURNSpending
HIGH-PERFORMANCE ADAPTABLE SAMPLING SYSTEMH01J 37/32899, H01J 37/32972, H01J 37/32623, H01J 37/32816, H01J 37/32981, H01J2237/05, H01J2237/151, H01J2237/188, H01J2237/24592Filed as Tokyo Electron Limited2026-06-11Charles Schlechtepending
FILM FORMATION METHOD AND FILM FORMATION APPARATUSH10P 14/412, C23C 16/0263, C23C 16/045, H10P 14/42, H10W 20/057, C23C 16/02, C23C 16/047, C23C 16/14, C23C 16/452, C23C 16/455, C23C 16/45523, C23C 16/45536, C23C 16/45542, C23C 16/45553, C23C 16/4586, C23C 16/505, C23C 16/507, C23C 16/5096, H01J 37/32174, H01J 37/32357, H01J 37/3244, H05H 1/46Filed as Tokyo Electron Limited2026-06-10Kazuki DEMPOHpending
SIDEWALL INORGANIC PASSIVATION FOR DIELECTRIC ETCHING VIA SURFACE MODIFICATIONH10P 14/6532, H10P 50/73, H10P 50/244, H10P 14/6319, H10P 14/6336, H10P 14/683, H10P 14/6339, H10P 50/283Filed as Tokyo Electron Limited2026-06-01Du Zhangpending
FORMATION OF LOW-TEMPERATURE AND HIGH-TEMPERATURE IN-SITU DOPED SOURCE AND DRAIN EPITAXY USING SELECTIVE HEATING FOR WRAP-AROUND CONTACT AND VERTICALLY STACKED DEVICE ARCHITECTURESH10P 34/42, H10P 95/90, H10D 30/024, H10D 62/151, H10D 30/6219, H10D 30/0212, H10P 72/0436Filed as Tokyo Electron Limited2026-05-27Jeffrey SMITHpending
PLASMA POTENTIAL ADJUSTMENT CIRCUITH01J 37/32, H01J 37/32146, H01J 37/32027, H01J 37/32091, H01J 37/321, H01J 37/32935, H01J2237/327Filed as Tokyo Electron Limited2026-05-26Qiang Wangpending
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEMC23C 16/24, H10P 72/30, C03C 17/22, C23C 16/56Filed as Tokyo Electron Limited2026-05-20Fumiaki TANAKApending
PLASMA PROCESSING APPARATUSH01J 37/32091, H01J 37/32174, H01J 37/32568, H10P 72/7626, H10P 72/0402, H01J 37/321, H01J 37/32522, H01J 37/3255, H01J 37/32715, H01J 37/32761Filed as Tokyo Electron Limited2026-05-19Hiroyuki MATSUURApending
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING SYSTEMH10W 20/072, H10W 20/46, H10P 14/68, H10P 14/60, H10P 14/6334, H10P 95/90, H10P 14/6512, H10P 14/6902, H10P 14/69433, H10W 20/01, H10P 14/6336, H10P 72/0454, H10P 14/668, H10P 14/69215Filed as Tokyo Electron Limited2026-05-19Yuki KIKUCHIpending
SUBSTRATE TRANSFER SYSTEM AND TRANSFER MODULEH10P 72/0464, H01J 37/32733, H10P 72/0456, H10P 72/3408, H10P 72/0402, H10P 72/50, B65G 47/90, H01J 37/32091Filed as Tokyo Electron Limited2026-05-18Toshiaki TOYOMAKIpending
INFORMATION PROCESSING METHOD, COMPUTER PROGRAM, AND INFORMATION PROCESSING APPARATUSG06F 16/90332, G06F 16/3329, G06F 16/33295, G06F 16/243, G06F 16/33, G06F 16/907, G06F 16/38, G06F 16/901, G06F 16/90335, G06F 16/9038, G06F 16/3334, G06F 16/90, G06F 16/24522, G06F 16/3344, G06F 16/345, G06N 5/00Filed as Tokyo Electron Limited2026-05-18Kenji MATOGAWApending
ANTENNA FOR INDUCTIVELY COUPLED PLASMA EXCITATION, ANTENNA UNIT FOR INDUCTIVELY COUPLED PLASMA EXCITATION, AND PLASMA PROCESSING APPARATUSH01J 37/3211, H01Q 1/50, H05H 1/01, H05H 1/4652, H01J 37/321, H01J 37/32183, H01J2237/327, H01Q 1/38, H01Q 1/48Filed as Tokyo Electron Limited2026-05-18Yohei YAMAZAWApending
SUBSTRATE PROCESSING SYSTEM, STORAGE MODULE, AND SUBSTRATE PROCESSING METHODH10P 72/18, H10P 14/60, H10P 72/3302, H10P 72/3404, H10P 72/7612, H10P 72/10, H10P 72/33, H10P 72/0464, H10P 72/3411, H10P 72/0454, H10P 50/242, H10P 72/30, H10P 72/3402Filed as Tokyo Electron Limited2026-05-14Nobuyuki NAGAYAMApending
FILM DEPOSITION APPARATUSC23C 14/541, C23C 16/46, B05D 1/60, C23C 14/12, C23C 14/50, C23C 14/54, C23C 16/4405, C23C 16/4412, C23C 16/45561, C23C 16/45574, C23C 16/4585, C23C 16/4586, C23C 16/52Filed as Tokyo Electron Limited2026-05-14Syuji NOZAWApending
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHODH01J 37/32174, H01J 37/32669, H10P 50/242, H01J 37/32091, H01J 37/32568, H01J 37/32825, H01J2237/332, H01J2237/334, H05H 1/46Filed as Tokyo Electron Limited2026-05-14Keiichi NAKAMOTOpending
CLEAN ROOM FLOOR OPENING DETECTIONG01B 11/00, G01S 17/89, G01S 17/04, G01B 11/0608, G01S 17/42, G08B 21/02Filed as Tokyo Electron Limited2026-05-14Hikaru AKADApending
HYBRID X-RAY AND OPTICAL METROLOGY AND NAVIGATIONG01N 23/2206, G01N 21/8851, G01N 21/9501, G01N 23/201, G01N 23/223, G01N2021/8887, G01N2223/401, G01N2223/414, G01N2223/6116Filed as Tokyo Electron Limited2026-05-13Francisco Machucapending
Inspection Method, Inspection Device, and Substrate Processing DeviceG01B 11/26, G01N 21/8422, G01N 21/9501, H10P 74/203, H10W 80/031, H10P 74/00, H10W 80/743, H10W 80/314, G01B2210/56, G01N 21/211, G01N 21/55, G01N 21/8806, G01N 21/8851, G01N 21/9505, G01N 21/95607, G01N 21/95684, G01N2021/213, G01N2021/3568, G01N2021/8427, G01N2021/8438, G01N2021/8883, G01N2021/95615, G01N2201/1293, G06N 3/08Filed as Tokyo Electron Limited2026-05-13Hirokazu UEDApending
ETCHING METHOD AND PLASMA PROCESSING APPARATUSH10P 50/283, H01J 37/32724, H10P 50/691, H10P 50/73, H10W 20/081, H10P 50/242, H10P 70/234, H01J 37/32816, H01J2237/2001, H01J2237/3342Filed as Tokyo Electron Limited2026-05-12Koki MUKAIYAMApending
MONITORING SYSTEM OF CLEAN ROOMG01R 27/14, G08B 21/02, G08B 21/22, H10P 72/0618, H10P 72/0616, G08B 13/10, G08B 13/26, G08B 21/182Filed as Tokyo Electron Limited2026-05-12Hikaru AKADApending
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE TEMPERATURE CONTROL METHODH10P 72/0602, H10P 72/0432, H01J 37/32724, H10P 72/0434, H10P 72/722, H10P 72/7624, H10P 72/72, H10P 72/70, H10P 50/242, G05D 23/19, H01J 37/32091, H01J 37/32522, H01J 37/32642, H01J 37/32715, H01J 37/32935, H01J 37/3299, H01J2237/2001, H05B 3/00Filed as Tokyo Electron Limited2026-05-11Masaharu OYApending
PRODUCTION METHOD OF SEMICONDUCTOR DEVICEH10B 12/05, H10D 88/01, H10B 12/00, H10B 12/033, H10B 12/315, H10B 12/03, H10D 86/411, H10D 30/0323, H10D 1/716, H10D 30/6758, H10D 1/692, H10D 84/80, H10D 84/0126, H10D 86/201, H10D 86/0214, H10D 1/041, H10D 30/0321, H10D 1/68, H10D 30/01, H10D 86/40, H10D 88/00, H10D 86/60, H10D 30/6713, H10D 30/67, H10D 84/038, H10D 84/83, H10D 84/813, H10D 86/481, H10D 86/01, H10D 86/0225, H10P 52/00, H10P 14/20, H10P 36/07, H10P 56/00, H10W 10/181, H10P 14/3802, H10W 20/01, H10P 90/1914, H10P 90/1916, H10P 14/3411Filed as Tokyo Electron Limited2026-05-08Toshinori FUKAIpending
COMPUTER PROGRAM, INFORMATION PROCESSING APPARATUS, AND INFORMATION PROCESSING METHODG06N 20/00, G06F 30/398, G06F2119/18, G06N 7/01, H10P 72/04, G05B 19/418Filed as Tokyo Electron Limited2026-05-07Dai KOBAYASHIpending
TRANSPORT SYSTEM AND TRANSPORT METHODH10P 72/3302, H10P 72/3202, H10P 72/0456, H10P 72/7602, H10P 72/7612, H10P 72/0606, H10P 72/0464, H10P 72/0468, H10P 72/50, H10P 72/7618, H10P 72/3306, H10P 72/30, B65G 49/06, B65G 49/07Filed as Tokyo Electron Limited2026-05-07Yusuke NATORIpending
METHOD OF DEPOSITION IN HIGH ASPECT RATIO (HAR) FEATURESH10P 50/73, H10P 50/242, H10P 76/4085, H10P 14/6336, H10P 14/69394, H10P 14/69472, H10P 50/285, H10P 14/69391, H10P 14/6339, H10P 14/668, H10P 50/283, H10P 14/69475, C23C 16/045, C23C 16/303, C23C 16/308, C23C 16/34, C23C 16/403, C23C 16/405, C23C 16/4408, C23C 16/45536, C23C 16/45551, C23C 16/45553Filed as Tokyo Electron Limited2026-05-05Shihsheng Changpending
CONTROL PARAMETER SETTING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUMH10P 72/0604, B05C 11/1005, B05D 1/002, G03F 7/162, H10P 72/0448, H10P 72/0612, B05C 5/0225, B05C 11/1002, G03F 7/168Filed as Tokyo Electron Limited2026-05-04Toyohisa TSURUDApending
TRANSFER SYSTEM AND TRANSFER METHODH10P 72/3408, G01R 31/2893, H10P 72/0456, H10P 72/3216, H10P 72/3221, H10P 72/0468, H10P 72/50, H10P 72/3218, H10P 72/30, B65G 49/06, B65G 49/07, G01R 31/2891Filed as Tokyo Electron Limited2026-05-04Yusuke NATORIpending
SUBSTRATE PROCESSING METHOD AND PLASMA PROCESSING APPARATUSH10P 50/268, H01J 37/32862, H10P 50/691, H10P 50/71, H10P 50/73, H10P 72/72, H10P 72/0421, H10P 50/242, H10P 50/283, H10P 14/69215, C23C 16/401, C23C 16/52, H01J 37/32091, H01J 37/32449, H01J 37/32724, H01J2237/2007, H01J2237/334Filed as Tokyo Electron Limited2026-05-04Ryutaro SUDApending
METHOD OF FORMING A SEMICONDUCTOR DEVICE WITH AIR GAPS FOR LOW CAPACITANCE INTERCONNECTSH10W 20/072, H10W 20/46, H10W 20/47, H10W 20/063, H10W 20/495, H10W 20/077, H10W 20/0633, H10W 20/075Filed as Tokyo Electron Limited2026-05-04Kandabara Tapilypending
POWER SUPPLY SYSTEM, PLASMA PROCESSING APPARATUS, AND CONTROL METHODH01J 37/32128, H01J 37/32174, H01J 37/32082, H01J 37/32091, H01J 37/32146, H01J 37/32155, H01J 37/32165, H01J 37/32183, H01J 37/3244, H01J 37/32706, H01J 37/32715, H01J 37/32724, H01J 37/32935, H01J 37/3299, H05H 1/46Filed as Tokyo Electron Limited2026-04-30Yuto KOSAKApending
PROCESSING METHOD AND PLASMA PROCESSING APPARATUSH10P 72/0432, H01J 37/32724, H10P 14/60, H10P 72/0434, H10P 72/0602, H10P 72/722, H10P 72/7624, H10P 72/72, H10P 72/70, H10P 50/242, H10P 14/29, H10P 72/7611, C23C 16/50, H01J 37/3244, H01J 37/32642, H01J 37/32715, H01J2237/2065Filed as Tokyo Electron Limited2026-04-28Kazuya NAGASEKIpending
PLASMA PROCESSING APPARATUS, POWER SUPPLY SYSTEM, AND CONTROL METHODH01J 37/32091, H01J 37/32174, H01J 37/32, H01J 37/32082, H01J 37/32128, H01J 37/32146, H01J 37/32155, H01J 37/32165, H01J 37/32183, H01J 37/3244, H01J 37/32642, H01J 37/32697, H01J 37/32706, H01J 37/32715, H01J 37/32935, H01J 37/3299Filed as Tokyo Electron Limited2026-04-27Yuto KOSAKApending
ELECTROSTATIC CHUCK, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHODH10P 72/722, H10P 72/7624, H10P 14/60, H10P 72/7614, H10P 72/0434, H10P 14/43, H10P 72/0432, H10P 72/72, H10P 72/70, H10P 50/242, H10P 72/7611, H10P 72/7616, C23C 14/50, C23C 16/06, C23C 16/4581, C23C 16/4583, C23C 16/4585, C23C 16/4586, C23C 16/46, H02N 13/00Filed as Tokyo Electron Limited2026-04-24Einosuke TSUDApending
DRY RESIST SYSTEM AND METHOD OF USINGG03F 7/0043, G03F 7/70033, G03F 7/0042, G03F 7/0752, G03F 7/167Filed as Tokyo Electron Limited2026-04-24Kandabara Tapilypending
INFORMATION PROCESSING METHOD, INFORMATION PROCESSING APPARATUS, AND COMPUTER PROGRAMG06F 16/24542, G06N 3/0455, G06N 3/045, G06N 20/00, G06N 20/10, G06N 3/047, G06N 3/09, G06N 3/0895, G06N 3/0499, G06N 3/0464, G06N 3/044, G06N 3/096, G06N 3/0442, G06N 3/0475, H10P 95/00, H10P 72/0612, G06N 3/02, G06N 3/08, G06N 3/084, G06N 3/088Filed as Tokyo Electron Limited2026-04-24Ruiki KOBAYASHIpending
SUBSTRATE-PROCESSING METHODH10P 14/6532, H10P 14/6922, B05D 1/62, H10P 14/6905, H10P 14/6336, H10P 14/6682, B05D 3/145, C23C 16/325, C23C 16/36, C23C 16/50, C23C 16/56Filed as Tokyo Electron Limited2026-04-23Daisuke OBApending
Film Forming Apparatus and Film Forming MethodH10N 50/01, H10P 72/0468, H10B 61/00, H10N 50/80, H10N 50/85, H10P 72/3302, H10P 72/0432, H10P 72/0454Filed as Tokyo Electron Limited2026-04-23Keisuke SATOpending
FILM FORMING METHOD AND FILM FORMING APPARATUSH10P 14/69433, H10P 14/6339, C23C 16/34, H10P 14/6532, H10P 14/60, H10P 14/6336, H10P 14/694, H10P 14/6682, C23C 16/14, C23C 16/303, C23C 16/345, C23C 16/36, C23C 16/4404, C23C 16/4405, C23C 16/4412, C23C 16/452, C23C 16/455, C23C 16/45523, C23C 16/45527, C23C 16/45531, C23C 16/45534, C23C 16/45536, C23C 16/45538, C23C 16/4554, C23C 16/45542, C23C 16/45544, C23C 16/45553, C23C 16/45565, C23C 16/4557, C23C 16/4586, C23C 16/50, C23C 16/505, C23C 16/5096, C23C 16/515, C23C 16/52, C23C 16/56Filed as Tokyo Electron Limited2026-04-23Takamichi KIKUCHIpending
FILM FORMING METHOD AND FILM FORMING APPARATUSC23C 16/34, C23C 16/4412, C23C 16/45527, H10P 14/60, H10P 14/6339, H10P 14/69475, C23C 16/303, C23C 16/4404, C23C 16/4405, C23C 16/4408, C23C 16/455, C23C 16/45523, C23C 16/45531, C23C 16/45534, C23C 16/45544, C23C 16/45546, C23C 16/45553, C23C 16/45557, C23C 16/45561, C23C 16/45565, C23C 16/45578, C23C 16/52Filed as Tokyo Electron Limited2026-04-23Takashi SAMESHIMApending
PLASMA PROCESSING APPARATUS, METHOD OF MANUFACTURING ELECTRODE PLATE, AND METHOD OF REGENERATING ELECTRODE PLATEH01J 37/3244, H01J 37/32449, H01J 37/32568, H10P 14/60, H10P 50/242, H01J 9/265, H01J 37/32009, H01J 37/32091, H01J 37/32422, H01J 37/32467, H01J 37/32477, H01J 37/32495, H01J 37/32522, H01J 37/32532, H01J 37/32541, H01J 37/3255, H01J 37/32559, H01J 37/32642, H01J 37/32715, H01J 37/32724, H01J 37/32862, H01J2237/002, H05H 1/46Filed as Tokyo Electron Limited2026-04-22Takuya HARASHIMApending
COMPUTER PROGRAM, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING DEVICEG06V 10/764, G06T 7/0004, G06T 7/0006, G06T 7/136, G06T 7/181, G06T 7/62, G06T 7/12, G06T 7/10, G06T 7/11, G06T 7/73, G06T 7/13, G06T 7/149, G06V 10/761, G06V 10/46, H10P 74/00, G01N 23/2251, G06T 7/00, G06T 7/001, G06T 7/60, G06T2207/10061, G06T2207/20081, G06T2207/20084, G06T2207/30148Filed as Tokyo Electron Limited2026-04-20Takahiro NAKAMURApending
PLASMA PROCESSING APPARATUSH01J 37/32256, H01J 37/32651, H01J 37/32834, H01J 37/32091, H01J 37/3211, H01J 37/32165, H01J 37/32174, H01J 37/32201, H01J 37/32229, H01J 37/3244, H01J 37/32522, H01J 37/32568, H01J 37/32633, H01J 37/32642, H01J 37/32715, H01J 37/32844, H05H 1/46Filed as Tokyo Electron Limited2026-04-20Takaaki KATOpending
SEMICONDUCTOR PRODUCTION APPARATUS AND INSTALLATION METHODH10P 72/7612, H10P 72/0462, H01J 37/32715, H10P 14/60, H10P 72/722, H10P 72/7624, H10P 95/00, H10P 72/72, H10P 72/70, H10P 50/242Filed as Tokyo Electron Limited2026-04-20Yusuke HAYASAKApending
SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUSH10P 72/722, H01J 37/32715, H10P 72/0434, H10P 72/7624, H10P 72/70, H10P 50/242, H10P 72/7616, H01J 37/3244, H01J 37/32642, H01J 37/32724, H01J2237/2007, H05H 1/46Filed as Tokyo Electron Limited2026-04-16Naoki IMOTOpending
BONDING APPARATUS, BONDING SYSTEM, AND BONDING METHODH10P 72/0428, H10P 72/53, H10W 46/501, H10P 72/7602, H10W 46/301, H10P 72/7612, H10P 72/72, H10P 72/7618, H10W 46/101, H10P 72/3306, H10W 46/00, H10P 10/128Filed as Tokyo Electron Limited2026-04-15Yutaka Yamasakipending
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHODH10P 72/3311, H10P 72/3304, H10P 72/78, H10P 14/60, H10P 72/0456, H10P 72/3302, H10P 72/7602, H10P 72/3202, H10P 72/0402, H10P 72/0606, H10P 72/3412, H10P 72/0464, H10P 72/3411, H10P 72/0454, H10P 72/0461, H10P 72/0462, H10P 72/0452, H10P 72/0458, H10P 72/0466, H10P 50/242, H10P 72/3306, H10P 72/30, H10P 72/3402, B25J 9/06Filed as Tokyo Electron Limited2026-04-15Hiromitsu SAKAUEpending
PLASMA PROCESSING METHOD AND PLASMA PROCESSING SYSTEMH10P 76/204, H10P 50/73, H10P 76/4085, H10P 76/405, H10P 50/71, H10P 50/283, G03F 7/0042, H01J 37/32082, H01J 37/32174, H01J 37/32449, H01J2237/332, H01J2237/334Filed as Tokyo Electron Limited2026-04-15Takahiro YONEZAWApending
INSPECTION METHOD, INSPECTION APPARATUS, AND INSPECTION SYSTEMG01R 31/2844, G01R 31/311, H10F 39/10, H10P 74/00, G01R 31/26, G01R 31/2825, G01R 31/2837, G01R 31/308Filed as Tokyo Electron Limited2026-04-15Fumiya TAKASEpending
SUBSTRATE PROCESSING APPARATUS, TEMPERATURE CONTROL DEVICE, AND TEMPERATURE CONTROL METHODH10P 72/0434, H01J 37/32522, H01J 37/32724, H10P 72/0402, H10P 72/7624, H10P 72/70, G05D 23/00, G05D 23/13, H01J 37/32091, H01J 37/32715Filed as Tokyo Electron Limited2026-04-14Takuya HARASHIMApending
Method of Controlling Substrate Transfer SystemH10P 72/3302, H10P 72/0606, H10P 72/3311, H10P 72/0464, H10P 72/3304, H10P 72/50, H10P 72/0466, H10P 72/3402Filed as TOKYO ELECTRON LIMITED2026-04-14Kosuke KINOSHITApending
PLASMA PROCESSING METHOD AND APPARATUSH01J 37/32449, H01J 37/32834, H01J 37/32357, H01J 37/3244, H01J2237/1825, H01J2237/3341Filed as Tokyo Electron Limited2026-04-14Derek William Bassettpending
SUBSTRATE PROCESSING APPARATUS AND METHOD OF MAINTAINING DRYING DEVICE IN SUBSTRATE PROCESSING APPARATUSH10P 72/0456, H10P 72/0408, H10P 72/0464, H10P 72/0404, H10P 70/20, H10P 72/3302, H10P 72/33, H10P 72/0406, H10P 72/0454, H10P 72/0462, H10P 72/0452, H10P 72/0458, H10P 70/80, H10P 72/0414, B08B 3/02, B08B 3/08Filed as Tokyo Electron Limited2026-04-13Shota Umezakipending
Moving Device, Inspection Device, and Moving MethodG01R 31/2887, G01R 31/2891, H10P 74/00, H10P 72/0606, H10P 72/7624, H10P 72/50, H10P 72/7618, G01R 1/06794, G01R 1/07314, G01R 1/14, G01R 31/28, G01R 31/2889Filed as Tokyo Electron Limited2026-04-10Yuki HIROSEpending
CONDITIONING METHOD AND PLASMA PROCESSING SYSTEMH01J 37/32807, H01J 37/32862, H10P 14/60, H10P 50/242, H01J 37/32091, H01J 37/32357, H01J 37/3244, H01J 37/32449, H01J 37/32477, H01J 37/32495, H01J 37/32522, H01J 37/32568, H01J 37/32724, H01J 37/32816, H01J 37/32834, H01J 37/32853, H01J 37/3288, H01J 37/32935, H05H 1/46Filed as Tokyo Electron Limited2026-04-10Toshikatsu TOBANApending
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUSH10P 50/283, H01J 37/3244, H01J 37/32706, H10P 50/73, H10P 72/0421, H10P 50/242, H01J 37/32137, H01J 37/32449, H01J 37/32724, H01J2237/332, H01J2237/334, H05H 1/46Filed as Tokyo Electron Limited2026-04-10Takahiro YONEZAWApending
IN-VACUUM INTEGRATED METROLOGY SENSOR FOR THIN FILM DEPOSITION AND ETCHING APPLICATIONSH10P 72/0604, H10P 74/238, G01N 21/9501, G01N 21/84, G01N2201/025, G01N2201/0638Filed as Tokyo Electron Limited2026-04-09Ivan MALEEVpending
PLASMA PROCESSING APPARATUS AND SHOWER HEADH01J 37/32192, H01J 37/3244, H10P 50/242, C23C 16/44, C23C 16/45565, C23C 16/50, C23C 16/505, C23C 16/511, H01J 37/32082, H01J 37/32091, H01J 37/32165, H01J 37/32183, H01J 37/32201, H01J 37/3222, H01J 37/32229, H01J 37/32238, H01J 37/32247, H01J 37/32357, H01J 37/32449, H01J 37/32522, H01J 37/32678, H01J 37/32715, H01J2237/024, H01J2237/332, H05H 1/46Filed as Tokyo Electron Limited2026-04-09Kazushi KANEKOpending
FILM FORMATION METHOD AND FILM FORMATION APPARATUSH10P 14/6684, C23C 16/401, C23C 16/402, H10P 14/6687, H10P 14/60, H10P 14/6336, H10P 14/6339, H10P 14/69215, C23C 16/345, C23C 16/42, C23C 16/4408, C23C 16/452, C23C 16/455, C23C 16/45534, C23C 16/45536, C23C 16/4554, C23C 16/45542, C23C 16/45553, C23C 16/46, C23C 16/505, C23C 16/52, C23C 16/56Filed as Tokyo Electron Limited2026-04-09Yoshimasa WATANABEpending
ETCHING METHOD AND ETCHING APPARATUSH10P 50/283, H10P 72/0604, H10P 72/0402, H10P 72/0421, H10P 50/00, H10P 50/242Filed as Tokyo Electron Limited2026-04-09Keiji TANOUCHIpending
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHODH10P 72/78, H10P 72/0428, H10P 72/53, Y10T 156/1132, Y10T 156/1944, H10P 72/76, H10W 99/00, H10P 95/00, H10P 72/50, B32B 43/006Filed as Tokyo Electron Limited2026-04-07Kimio Motodapending
ETCHING METHOD AND ETCHING APPARATUSH10P 72/3302, H10P 50/244, H10P 50/283, H10P 72/0456, H10P 50/268, H10P 14/6304, H10P 14/6319, H10P 72/0464, H10P 72/0454, H10P 72/0421, H10P 14/69215, H10P 14/6927, H01J 37/32357Filed as Tokyo Electron Limited2026-04-06Akitaka SHIMIZUpending
INTEGRATED METROLOGY FOR PROCESS CONTROLS IN WAFER BONDING SYSTEMH10P 72/0428, H10P 72/0616, G05B 19/4099, G05B2219/45031Filed as Tokyo Electron Limited2026-04-03Nathan IPpending
FILM-FORMING METHOD AND APPARATUS FOR TWO-DIMENSIONAL MATERIAL LAYERC23C 16/305, C23C 16/56, H10P 14/60, C23C 16/02, C23C 16/0227, C23C 16/0272, C23C 16/0281, C23C 16/04, C23C 16/30, C23C 16/4481, C23C 16/4485, C23C 16/4486, C23C 16/45523, C23C 16/45563, C23C 16/4584, C23C 16/46, C23C 16/52Filed as Tokyo Electron Limited2026-04-01Shinichi TANABEpending
SUBSTRATE TRANSFER DEVICE AND SUBSTRATE PROCESSING SYSTEMFiled as Tokyo Electron Limited2026-03-31Dongwei LIpending
SELECTIVE IN-SITU CARBON-BASED MASK PROTECTIONH10P 50/73, H10P 76/4085, H10P 76/405, H10P 76/204, H10P 50/285, H10P 50/283, H01J 37/32449, H01J2237/3341, H01J2237/3346Filed as Tokyo Electron Limited2026-03-30Yu-Hao Tsaipending

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