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Lam Research Corp Patents
What Lam Research Corp has filed at the patent office — applications as well as grants, because a filing is on the record eighteen months before anyone has to say what it was for.
LRCX on carbonthat →Filings on file
70
Granted
0
Still pending
70
Filed under
2 names
70 filings
Newest filing first. A pending application has no patent number yet, and most never get one.
| Invention | Patent |
|---|---|
| INTEGRATION OF VAPOR DEPOSITION PROCESS INTO PLASMA ETCH REACTORH01J 37/3244, H01J 37/32449, C23C 16/0245, C23C 16/45565, C23C 16/50, C23C 16/56, H01J 37/32357, H01J 37/32458, H01J 37/32715, H01J 37/32816, H01J2237/2002, H01J2237/3321, H01J2237/334Filed as Lam Research Corporation2026-06-17Eric A. Hudson | pending |
| GAS SUPPLY LINE ARRANGEMENTSC23C 16/4405, H01J 37/3244, H10P 72/0402, C23C 16/4408, C23C 16/4412, C23C 16/45561, H01J 37/32449, H01J 37/32862Filed as Lam Research Corporation2026-06-10Eashan Raju Dhawade | pending |
| CHAMBER-ACCUMULATION EXTENSION VIA IN-SITU PASSIVATIONC23C 16/402, C23C 16/4404, C23C 16/45565, C23C 16/50, C23C 16/505, C23C 16/52, H01J 37/32477Filed as Lam Research Corporation2026-06-09ZhiYuan Fang | pending |
| SYSTEMS AND METHODS FOR ETCHING A HIGH ASPECT RATIO STRUCTUREH10P 50/283, H10P 72/0604, H10P 50/268, H10P 74/238, H10P 72/0421, H01J 37/32082, H01J 37/32091, H01J 37/32165, H01J 37/32449, H01J 37/32963, H01J2237/327, H01J2237/3341Filed as Lam Research Corporation2026-06-04Nikhil Dole | pending |
| Metrology Enclosure Including Spectral Reflectometry System for Plasma Processing System Using Direct-Drive Radiofrequency Power SupplyH01J 37/3211, H01J 37/32972, H01J 37/321, H01J 37/32174, H01J 37/32917Filed as Lam Research Corporation2026-05-29Alexander Miller Paterson | pending |
| LIFT PIN HOLDER ASSEMBLY AND APPARATUSH10P 72/7612, H10P 72/1912, H10P 72/7624, H10P 72/7616, H01J 37/32715, H01J 37/32733Filed as Lam Research Corporation2026-05-29Aleksey V. ALTECOR | pending |
| Pulsing Remote Plasma For Ion Damage Reduction And Etch Uniformity ImprovementH01J 37/32357, H10P 50/242, H01J 37/321, H01J 37/32146, H01J 37/32422, H01J 37/32449, H01J 37/32495, H01J2237/334, H01J2237/3343Filed as Lam Research Corporation2026-05-21Wei Yi LUO | pending |
| GAS DISTRIBUTION FACEPLATE WITH OBLIQUE FLOW PATHSH10P 72/0402, B05B 1/185, H01J 37/3244, B05B 1/1822, B05B 1/182, B05B 1/1823, H10P 72/0426, H10P 72/0421, H10P 72/0471, H10P 72/0424, B05B 1/005, H01J2237/334Filed as Lam Research Corporation2026-05-19Henry Stephen Povolny | pending |
| SUBSTRATE STICKING AND BREAKAGE MITIGATIONH10P 72/7604, H10P 72/18, C25D 17/06, H10P 72/7602, H10P 72/33, B25J 9/1633, B25J 11/0095, B25J 13/085, C25D 17/001, C25D 17/08, C25D 21/12Filed as Lam Research Corporation2026-05-18Aaron Berke | pending |
| SYSTEMS AND TECHNIQUES FOR OPTICAL MEASUREMENT OF THIN FILMSH10P 72/0604, G01N 21/8422, H10P 74/203, H10P 74/23, G01B 11/0625, G01B 11/30, G01N 21/41Filed as Lam Research Corporation2026-05-18Liu Yang | pending |
| METAL ETCHH10N 50/01, H10P 50/267, H10B 61/00, H10N 50/10, H10P 50/266, H10P 50/242, H10P 50/283, C23F 1/00, C23F 1/12Filed as Lam Research Corporation2026-05-12Yiwen FAN | pending |
| PARTS WITH EMBEDDED CHANNELS FOR SEMICONDUCTOR MANUFACTURING SYSTEMSH01J 37/32091, H01J 37/3244, H10P 72/0402, B23P 13/00, B23P 15/00, B23P 17/00, C23C 16/45574, H01J 37/32155, H01J 37/32165Filed as Lam Research Corporation2026-05-01Seyedalireza Torbatisarraf | pending |
| DRY CHAMBER CLEAN OF PHOTORESIST FILMSG03F 7/167, G03F 7/36, H01J 37/32862, G03F 7/0042, G03F 7/0043, G03F 7/16, G03F 7/168, G03F 7/70925, G03F 7/70933, H01J 37/32357, H01J 37/32449, H01J 37/32522, H01J 37/32816, H01J 37/32853, H01J2237/3321, H01J2237/334Filed as Lam Research Corporation2026-04-30Daniel Peter | pending |
| MULTl-STATION TOOL WITH ROTATABLE TOP PLATE ASSEMBLYH10P 72/0462, H10P 72/7618, H10P 72/0441, H10P 72/7612, H10P 72/7621, H10P 72/7611Filed as Lam Research Corporation2026-04-29Karl Frederick Leeser | pending |
| SYSTEMS AND METHODS FOR REDUCING REFLECTED POWER ASSOCIATED WITH AN HF RF GENERATOR EFFICIENTLYH01J 37/32174, H01J 37/32183, H01J 37/32926, H01J 37/32935Filed as Lam Research Corporation2026-04-23Ranadeep Bhowmick | pending |
| Trim And Deposition Profile Control With Multi-Zone Heated Substrate Support For Multi-Patterning ProcessesH10P 72/0602, H10P 72/0402, C23C 16/52, H10P 74/203, H10P 72/7602, H10P 76/4085, H10P 72/0432, H10P 76/40, H10P 72/0404, C23C 16/45544, C23C 16/4586, C23C 16/46, G05B 19/401, G05B2219/45031, G05B2219/50333Filed as Lam Research Corporation2026-04-22Ramesh CHANDRASEKHARAN | pending |
| FLAT BOTTOM SHADOW RINGH10P 72/7606, H10P 72/7611, H01J 37/32642, H10P 72/0421, H10P 50/242, H01J 37/32715, H01J2237/334Filed as Lam Research Corporation2026-04-17Lai Wei | pending |
| TRANSFORMER ISOLATOR HAVING RF SHIELD STRUCTURE FOR EFFECTIVE MAGNETIC POWER TRANSFERH01F 27/363, H01J 37/32174, H01F 27/366, H01F 27/24, H01F 27/28, H01F 38/14, H01J 37/32183, H01J 37/32706, H01J 37/32724, H01J2237/2007Filed as LAM RESEARCH CORPORATION2026-04-14Neil M.P. Benjamin | pending |
| INTEGRATED TOOL LIFTH10P 72/3202, H10P 72/3406, H10P 72/7612, H10P 72/3212, H10P 72/0456, H10P 72/7602, H10P 72/3221, H10P 72/0606, H10P 72/0462, H10P 72/50, H10P 72/53, H10P 72/0452, H10P 72/3208, B65G 47/902, B65G2201/0297Filed as Lam Research Corporation2026-04-07Paul Albert Avanzino | pending |
| Systems and Methods for Radiofrequency Signal Generator-Based Control of Impedance Matching SystemH01J 37/32183, H01J 37/32091, H01J 37/321, H01J2237/24564, H01J2237/3345, H03H 7/38, H03H 7/40Filed as Lam Research Corporation2026-04-07Bradford J. Lyndaker | pending |
| ATOMIC LAYER ETCHING AND SMOOTHING OF REFRACTORY METALS AND OTHER HIGH SURFACE BINDING ENERGY MATERIALSH10P 50/267, H01J 37/3244, H10P 72/0421, H10P 50/242, H10P 50/283, H01J 37/32715, H01J 37/32926, H01J2237/3341Filed as Lam Research Corporation2026-04-03Wenbing Yang | pending |
| RF REFERENCE MEASURING CIRCUIT FOR A DIRECT DRIVE SYSTEM SUPPLYING POWER TO GENERATE PLASMA IN A SUBSTRATE PROCESSING SYSTEMH01J 37/32174, H01J 37/32935, H10P 72/0402, H01J 37/32183, H01J2237/334, H03H 1/00, H03H 7/38, H03H 7/40Filed as Lam Research Corporation2026-04-03Maolin Long | pending |
| APPARATUSES AND TECHNIQUES FOR CLEANING A MULTI-STATION SEMICONDUCTOR PROCESSING CHAMBERH10P 72/7621, H01J 37/32862, H10P 72/7626, H10P 72/0462, C23C 16/4405, C23C 16/45563, C23C 16/45589, H01J 37/32357, H01J 37/3244, H01J 37/32449, H01J 37/32853, H01J 37/32899, H01J2237/335Filed as Lam Research Corporation2026-03-27Xin Meng | pending |
| DEPOSITION OF METAL FILMSH10P 14/412, C23C 16/08, C23C 16/45553, H10B 12/34, H10B 41/20, H10B 12/488, H10P 14/6939, H10P 72/0402, H10P 14/418, H10P 14/432, H10P 14/6339, H10W 20/045, C23C 16/06, C23C 16/14, C23C 16/30, C23C 16/308, C23C 16/34, C23C 16/45525, C23C 16/45529, C23C 16/45534, C23C 16/45544, C23C 16/46, C23C 16/52, C23C 16/54, C23C 16/56Filed as Lam Research Corporation2026-03-27Joshua Collins | pending |
| SYSTEMS AND METHODS FOR METASTABLE ACTIVATED RADICAL SELECTIVE STRIP AND ETCH USING DUAL PLENUM SHOWERHEADH10P 72/0421, H01J 37/32146, H01J 37/3244, H10P 50/287, H10P 50/242, H10P 72/0431, B08B 5/023, H01J 37/321, H01J 37/32422, H01J 37/32449, H01J 37/32623, H01J 37/32724, H01J 37/32972, H01J 37/3299, H01J2237/334Filed as LAM RESEARCH CORPORATION2026-03-27Dengliang YANG | pending |
| AMMONIA-FREE DEPOSITION OF SILICON NITRIDEFiled as LAM RESEARCH CORPORATION2026-03-26NATHANIEL ELBA RICHEY | pending |
| METAL HALOPHOSPHINE COMPLEXES FOR THIN FILM DEPOSITIONFiled as LAM RESEARCH CORPORATION2026-03-25DOUGLAS WALTER AGNEW | pending |
| CARRIER RING FOR FLOATING TCP CHAMBER GAS PLATEH01J 37/3244, H01J 37/32715, H01J 37/321Filed as LAM RESEARCH CORPORATION2026-03-25Gordon PENG | pending |
| RF SIGNAL PARAMETER MEASUREMENT IN AN INTEGRATED CIRCUIT FABRICATION CHAMBERH01J 37/32183, H01J 37/32935, H10P 72/0604, H10P 72/0452, G01R 15/16, G01R 15/183, G01R 19/16528, G01R 19/2509, G01R 25/00, G01R 35/007, H01J 37/32926Filed as Lam Research Corporation2026-03-24Sunil Kapoor | pending |
| CONTROL OF PULSING FREQUENCIES AND DUTY CYCLES OF PARAMETERS OF RF SIGNALSH01J 37/32146, H01J 37/32165, H01J 37/32174Filed as Lam Research Corporation2026-03-24Tom A. Kamp | pending |
| REDUCING LINE BENDING DURING METAL FILL PROCESSFiled as LAM RESEARCH CORPORATION2026-03-23MICHELLE LEE | pending |
| FILLING RECESSED FEATURES WITH CARBON-CONTAINING MATERIALSFiled as LAM RESEARCH CORPORATION2026-03-19TODD SCHROEDER | pending |
| TRAP DISK FOR PULSED LASER DEPOSITIONFiled as LAM RESEARCH CORPORATION2026-03-19SAURISH DAS | pending |
| COMPONENTS AND PROCESSES FOR MANAGING PLASMA PROCESS BYPRODUCT MATERIALSC23C 16/4404, H01J 37/32495, H01J 37/32871, B24C 1/06, C23C 16/4412, C23C 16/4585, H01J 37/32119, H01J 37/32183, H01J 37/32467, H01J 37/32477, H01J 37/32504, H01J 37/32642, H01J 37/32651, H01J 37/32743, H01J2237/334Filed as Lam Research Corporation2026-03-18Gordon Wen-Yin Peng | pending |
| PROCESSING TOOL CAPABLE FOR FORMING CARBON LAYERS ON SUBSTRATESH10P 14/6902, H10P 14/6336, C23C 16/505, C23C 16/515, H10P 76/405, C23C 16/26, C23C 16/517, H01J 37/32082, H01J 37/32422, H01J 37/32449, H01J2237/332Filed as Lam Research Corporation2026-03-16Karl Frederick LEESER | pending |
| ADAPTIVE TILING FOR CAPACITANCE EXTRACTIONFiled as LAM RESEARCH CORPORATION2026-03-16QING PENG WANG | pending |
| FLARED THROUGH-HOLE SHOWERHEAD AND PRESSURE MATCHING UNDERCOATFiled as LAM RESEARCH CORPORATION2026-03-16ELI JEON | pending |
| NON-METAL INCORPORATION IN MOLYBDENUM ON DIELECTRIC SURFACESH10P 14/43, H10P 14/418, H10W 20/045, H10B 12/488, H10D 64/037, H10D 64/035, H10W 20/425, H10P 14/432, H10P 14/412, H10P 14/40, C23C 16/02, C23C 16/0272, C23C 16/06, C23C 16/14, C23C 16/45527, C23C 16/45544, C23C 16/46, C23C 16/52, C23C 16/56Filed as Lam Research Corporation2026-03-14Lawrence Schloss | pending |
| EPITAXIAL DEPOSITIONFiled as LAM RESEARCH CORPORATION2026-03-13BHADRI N. VARADARAJAN | pending |
| POROUS COMPONENT FOR A PROCESSING TOOLFiled as LAM RESEARCH CORPORATION2026-03-12AMIT SURESH POWAR | pending |
| HIGH-SPEED 3D METAL PRINTING OF SEMICONDUCTOR METAL INTERCONNECTSB33Y 10/00, C25D 5/02, C25D 5/026, B33Y 30/00, B33Y 50/02, Y02P 10/25, B22F 10/25, H10W 20/031, H10P 14/47, C25D 3/38, C25D 5/04, C25D 5/08, C25D 5/10, C25D 7/123, C25D 17/001, C25D 17/10, C25D 17/12, C25D 21/10, C25D 21/12Filed as LAM RESEARCH CORPORATION2026-03-11Steven T. MAYER | pending |
| LOW VOLUME PROCESSING CHAMBER FOR PROCESSING SEMICONDUCTOR SUBSTRATES IN SUBSTRATE PROCESSING SYSTEMSFiled as LAM RESEARCH CORPORATION2026-03-11MICHAEL J. JANICKI | pending |
| OXIDATION RESISTANT PROTECTIVE LAYER IN CHAMBER CONDITIONINGH10P 14/6336, C23C 16/401, H10P 14/6905, H10P 74/203, H10P 74/235, H10P 72/0402, H10P 14/24, H10W 74/01, C23C 16/4404, C23C 16/455, C23C 16/45536, C23C 16/505, H01J 37/32522, H01J 37/32816Filed as Lam Research Corporation2026-03-10Fengyuan Lai | pending |
| ATOMIC LAYER DEPOSITION OF MOLYBDENUM-AND-PHOSPHORUS-CONTAINING FILMSFiled as LAM RESEARCH CORPORATION2026-03-09JEONG-SEOK NA | pending |
| CONTROL OF PULSED NON-SINUSOIDAL DIRECT CURRENT (DC) BIAS VOLTAGE IN PLASMA-BASED SUBSTRATE FABRICATIONFiled as LAM RESEARCH CORPORATION2026-03-05JOHN HOLLAND | pending |
| PRESSURE-BOOSTED CHILLER WITH INCREASED OPERATING TEMPERATURE RANGEFiled as LAM RESEARCH CORPORATION2026-03-03YEWEI WU | pending |
| METALLIZATION ON MISALIGNED STRUCTURESFiled as LAM RESEARCH CORPORATION2026-03-03MATTHEW BERTRAM EDWARD GRIFFITHS | pending |
| WIDE-COVERAGE EDGE RING FOR ENHANCED SHIELDING IN SUBSTRATE PROCESSING SYSTEMSH10P 72/7611, H01J 37/32642, H10P 72/7626, H10P 72/7624, H10P 72/0432, H10P 72/0421, H10P 72/0471, H10P 72/7616, H01J 37/32715, H01J 37/32807, H01J2237/3321, H01J2237/3341Filed as LAM RESEARCH CORPORATION2026-03-02Shang-I CHOU | pending |
| NOZZLE GAS FLOW TESTING SYSTEMFiled as LAM RESEARCH CORPORATION2026-03-02SHOUDHO DAS | pending |
| SYSTEMS AND METHODS FOR REGULATING POWER OUTPUT FROM A MATCHLESS PLASMA SOURCEH01J 37/32174, H01J 37/32146Filed as Lam Research Corporation2026-03-02Yuhou Wang | pending |
| SYSTEMS AND TECHNIQUES FOR GAS DELIVERY FOR SEMICONDUCTOR PROCESSINGFiled as LAM RESEARCH CORPORATION2026-03-02FEDERICO GALLI | pending |
| IN-SITU HIGH ASPECT RATIO ETCH WITH A RE-DEPOSITED HELMET MASKH10P 76/4085, H10P 50/73, H10P 14/6336, H10P 14/6339, C23C 16/06, C23C 16/45538, C23C 16/505, H01J 37/32449, H01J2237/04735, H01J2237/3321, H01J2237/334Filed as Lam Research Corporation2026-03-02Walter Thomas RALSTON | pending |
| LOW-STRESS FILM FOR HIGH-ASPECT-RATIO METAL CONTACT FILLFiled as LAM RESEARCH CORPORATION2026-03-02XITONG CHEN | pending |
| VOID-FREE CARBON GAPFILLFiled as LAM RESEARCH CORPORATION2026-02-27ASHWANTH SUBRAMANIAN | pending |
| ADJUSTMENT OF POWER AND FREQUENCY BASED ON THREE OR MORE STATESH01J 37/32183, H05H2242/26, H01J 37/244, H01J 37/32082, H01J 37/32137, H01J 37/32146, H01J 37/32155, H01J 37/32174, H03J 7/00, H05H 1/46Filed as Lam Research Corporation2026-02-27John C. Valcore JR. | pending |
| PRETREATMENT AND INHIBITION FOR ATOMIC LAYER DEPOSITION SELECTIVE TO MATERIAL COMPOSITIONFiled as LAM RESEARCH CORPORATION2026-02-27DOUGLAS WALTER AGNEW | pending |
| COMPENSATION ELEMENTS FOR PARASITIC CAPACITANCEFiled as LAM RESEARCH CORPORATION2026-02-27NOAH ELLIOT BAKER | pending |
| APPARATUSES FOR CLEANING A MULTI-STATION SEMICONDUCTOR PROCESSING CHAMBERH10P 72/0402, H10P 72/0462, C23C 16/4405, B08B 1/40, H10P 72/7602, H10P 72/7621, H10P 72/0421, H10P 72/0452, H10P 72/0471, H10P 72/3306, B08B 5/02, C23C 16/45508, C23C 16/45591, H01J 37/32449, H01J 37/32853, H01J 37/32862, H01J 37/32899, H01J 37/32908Filed as Lam Research Corporation2026-02-27Harish Kumar Premakumar | pending |
| HIGH-MODULUS CARBON GAPFILL FILMSFiled as LAM RESEARCH CORPORATION2026-02-27YIMING HU | pending |
| ANOLYTE ANION OXIDATION FOR INERT ANODE ELECTRODEPOSITIONFiled as LAM RESEARCH CORPORATION2026-02-25SWAPNIL DATTATRAY DESHMUKH | pending |
| SELECTIVE ETCH OF SACRIFICIAL LIGHT-ABSORBING MATERIALFiled as LAM RESEARCH CORPORATION2026-02-25GUOPING LI | pending |
| ELECTRODEPOSITION SYSTEM FOR SEQUENTIAL PLATING OPERATIONSFiled as LAM RESEARCH CORPORATION2026-02-25TIGHE A. SPURLIN | pending |
| PHOTORESIST WITH MULTIPLE PATTERNING RADIATION-ABSORBING ELEMENTS AND/OR VERTICAL COMPOSITION GRADIENTG03F 7/0042, G03F 7/0043, G03F 7/167, G03F 7/2004, G03F 7/70033Filed as Lam Research Corporation2026-02-25Timothy William Weidman | pending |
| DEPOSITION OF PURE METAL FILMSC23C 16/45523, C23C 16/45527, H10B 43/27, H10P 14/418, H10P 14/432, H10W 20/056, C23C 16/06, C23C 16/14, C23C 16/45553Filed as Lam Research Corporation2026-02-25Shruti Vivek Thombare | pending |
| EDGE GAS INJECTION NOZZLES FOR OUTER ELECTRODEFiled as LAM RESEARCH CORPORATION2026-02-24LINDSAY CARL KELLER | pending |
| CAPACITIVELY COUPLED PLASMA SYSTEM AND ETCH PROCESS WITH ENHANCED SUBSTRATE PERFORMANCEFiled as LAM RESEARCH CORPORATION2026-02-24FABIO RIGHETTI | pending |
| SUBSTRATE CLAMPING AND SOAKING SEQUENCESH10P 72/722, C23C 16/0209, C23C 16/45557, H10P 72/0432, C23C 16/4583, C23C 16/46, C23C 16/505Filed as Lam Research Corporation2026-02-23Feng BI | pending |
| PRECURSOR DISPENSING SYSTEMS WITH LINE CHARGE VOLUMES FOR SUBSTRATE PROCESSINGC23C 16/4481, C23C 16/45544, C23C 16/452, C23C 16/45536, C23C 16/45561, C23C 16/45565, C23C 16/52Filed as Lam Research Corporation2026-02-18Saangrut SANGPLUNG | pending |
| Edge Ring Transfer With Automated Rotational Pre-AlignmentH10P 72/3302, H10P 72/7602, H01J 37/32715, H10P 72/0606, H10P 72/0462, H10P 72/53, H10P 72/3218, H10P 72/34, H10P 72/7611, H01J 37/32642Filed as LAM RESEARCH CORPORATION2026-02-13Damon Tyrone GENETTI | pending |
| HIGH SELECTIVITY DOPED HARDMASK FILMSH10P 76/405, H10P 14/43, H10P 14/6334, H10P 50/73, H10P 76/4085, H10P 14/412, H10P 50/267, H10W 20/056, H10P 50/667, C23C 16/0272, C23C 16/06, C23C 16/30, C23C 16/50, C23C 16/505, H01J 37/32926, H01J2237/3321Filed as Lam Research Corporation2026-02-13Sonal Bhadauriya | pending |
Filings are matched to the company by applicant name, so a subsidiary filing under its own name is only here if that name resolves to this company. The applicant is printed as filed, which makes a wrong match visible. A patent is not a product: most applications are never granted, and most grants are never built.
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